AOTF18N65 650v,18a n-channel mosfet v ds i d (atv gs =10v) 18a r ds(on) (atv gs =10v) <0.39 w symbol v ds theAOTF18N65isfabricatedusinganadvancedhigh voltagemosfetprocessthatisdesignedtodeliver high levelsofperformanceandrobustnessinpopularac dc applications.byprovidinglowr ds(on) ,c iss andc rss along withguaranteedavalanchecapabilitythispartcan be adoptedquicklyintonewandexistingofflinepower supply designs. v units parameter absolute maximum ratings t a =25c unless otherwise noted 750v@150 drainsourcevoltage AOTF18N65 650 g d s v gs i dm i ar e ar e as peakdioderecoverydv/dt dv/dt t j ,t stg t l symbol r q ja r q jc *draincurrentlimitedbymaximumjunctiontempera ture. maximumjunctiontocase 50 0.4 avalanchecurrent c 595 singlepulsedavalancheenergy g 1190 parameter maximumleadtemperatureforsoldering purpose,1/8"fromcasefor5seconds junctionandstoragetemperaturerange derateabove25 o c repetitiveavalancheenergy c t c =25c thermal characteristics 5 powerdissipation b v 30 gatesourcevoltage 18* 12* t c =100c a 80 pulseddraincurrent c continuousdrain current t c =25c i d maximumjunctiontoambient a,d c p d v/ns mj 2.5 6.3 c/w AOTF18N65 units a c mj w w/ o c c/w 65 300 55to150 www.freescale.net.cn 1/5 general description features
symbol min typ max units 650 750 bv dss /?tj 0.7 v/ o c 1 10 i gss gatebodyleakagecurrent 100 n a v gs(th) gatethresholdvoltage 2.9 3.5 4.5 v r ds(on) 0.32 0.39 w g fs 20 s v sd 0.69 1 v i s maximumbodydiodecontinuouscurrent* 18 a i sm 80 a c iss 2270 3027 3785 pf c oss 170 271 370 pf c rss 12 22 32 pf r g 0.7 1.4 2.1 w q g 44 56 68 nc q gs 9 12.4 15 nc q gd 9 19.6 30 nc t d(on) 54 ns t r 83 ns t d(off) 149 ns staticdrainsourceonresistance v gs =10v,i d =9a reversetransfercapacitance v gs =0v,v ds =25v,f=1mhz switching parameters i s =1a,v gs =0v v ds =40v,i d =9a forwardtransconductance turnonrisetime gatesourcecharge gatedraincharge diodeforwardvoltage electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss zerogatevoltagedraincurrent v ds =650v,v gs =0v m a bv dss maximumbodydiodepulsedcurrent inputcapacitance outputcapacitance turnondelaytime turnoffdelaytime v gs =10v,v ds =325v,i d =18a, r g =25 w gateresistance v gs =0v,v ds =0v,f=1mhz totalgatecharge v gs =10v,v ds =520v,i d =18a dynamic parameters v ds =5v, i d =250 m a v ds =520v,t j =125c v ds =0v,v gs =30v v drainsourcebreakdownvoltage i d =250a,v gs =0v,t j =25c i d =250a,v gs =0v,t j =150c zerogatevoltagedraincurrent id=250a,vgs=0v t d(off) 149 ns t f 71 ns t rr 520 655 790 ns q rr 8 10 12 m c i f =18a,di/dt=100a/ m s,v ds =100v bodydiodereverserecoverycharge i f =18a,di/dt=100a/ m s,v ds =100v turnoffdelaytime r g =25 w turnofffalltime bodydiodereverserecoverytime a.thevalueofr q ja ismeasuredwiththedeviceinastillairenvironm entwitht a =25 c. b.thepowerdissipationp d isbasedont j(max) =150 c,usingjunctiontocasethermalresistance,andi smoreusefulinsettingtheupper dissipationlimitforcaseswhereadditionalheatsi nkingisused. c.repetitiverating,pulsewidthlimitedbyjuncti ontemperaturet j(max) =150 c,ratingsarebasedonlowfrequencyanddutycycl estokeepinitial t j =25 c. d.ther q ja isthesumofthethermalimpedancefromjunctiont ocaser q jc andcasetoambient. e.thestaticcharacteristicsinfigures1to6are obtainedusing<300 m spulses,dutycycle0.5%max. f.thesecurvesarebasedonthejunctiontocaset hermalimpedancewhichismeasuredwiththedevice mountedtoalargeheatsink,assuminga maximumjunctiontemperatureoft j(max) =150 c.thesoacurveprovidesasinglepulserating. g.l=60mh,i as =6.3a,v dd =150v,r g =25 ? ,startingt j =25 c www.freescale.net.cn 2/5 AOTF18N65 650v,18a n-channel mosfet
typical electrical and thermal characteristics 0 10 20 30 40 0 5 10 15 20 25 30 i d (a) v ds (volts) fig 1: on-region characteristics v gs =5v 5.5v 10v 6v 0.1 1 10 100 0 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics 55 c v ds =40v 25 c 125 c 0.2 0.3 0.4 0.5 0.6 0 10 20 30 40 r ds(on) ( w w w w ) i d (a) figure 3: on - resistance vs. drain current and gate v gs =10v 0 0.5 1 1.5 2 2.5 3 100 50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =9a 40 1.0e04 1.0e03 1.0e02 1.0e01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c figure 3: on - resistance vs. drain current and gate voltage 0.8 0.9 1 1.1 1.2 100 50 0 50 100 150 200 bv dss (normalized) t j (c) figure 5:break down vs. junction temparature www.freescale.net.cn 3/5 AOTF18N65 650v,18a n-channel mosfet
typical electrical and thermal characteristics 0 3 6 9 12 15 0 20 40 60 80 100 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =520v i d =18a 10 100 1000 10000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 0 5 10 15 20 0 25 50 75 100 125 150 current rating i d (a) t case ( c) 1s figure 10: maximum forward biased safe operating area for AOTF18N65 (note f) t case ( c) figure 9: current de-rating (note b) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q q q q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance for AOTF18N65 (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =2.5 c/w indescendingorder d=0.5,0.3,0.1,0.05,0.02,0.01,singlepulse singlepulse t on t p d www.freescale.net.cn 4/5 AOTF18N65 650v,18a n-channel mosfet
+ vdc ig vds dut + vdc vgs vgs 10v qg qgs qgd charge gatechargetestcircuit&waveform + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistiveswitchingtestcircuit&waveforms t t r d(on) t on t d(off) t f t off id + l vgs vds bv unclampedinductiveswitching(uis)testcircuit& waveforms vds dss 2 e=1/2li ar ar vdd vgs vgs rg dut + vdc vgs id vgs i ig vgs + vdc dut l vgs vds isd isd dioderecoverytes tcircuit&waveforms vds vds+ i f ar di/dt i rm rr vdd vdd q=idt t rr www.freescale.net.cn 5/5 AOTF18N65 650v,18a n-channel mosfet
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